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Ordering number : ENA1516
2SK4209
SANYO Semiconductors
DATA SHEET
2SK4209
Features
* * *
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 800 30 12 24 2.5 190 150 --55 to +150 410 12 Unit V V A A W W C C mJ A
Note : *1 VDD=99V, L=5mH, IAV=12A *2 L5mH, Single pulse
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=10mA, VGS=0V VDS=640V, VGS=0V VGS=30V, VDS=0V VDS=10V, ID=1mA 2.0 Ratings min 800 1.0 100 4.0 typ max Unit V mA nA V
Marking : K4209
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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O2809QB TK IM TC-00002109 No. A1516-1/5
2SK4209
Continued from preceding page.
Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, ID=6A ID=6A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=12A VDS=200V, VGS=10V, ID=12A VDS=200V, VGS=10V, ID=12A IS=12A, VGS=0V Ratings min 3.4 typ 6.8 0.83 1500 250 87 27 72 260 77 75 12 38 0.85 1.2 1.08 max Unit S pF pF pF ns ns ns ns nC nC nC V
Package Dimensions
unit : mm (typ) 7503-004
15.6 14.0 2.6 3.5
4.8 3.2 2.0
1.6 2.0 20.0 1.0 0.6
1
23 0.6 1.4
1.3
15.0
20.0
1.2
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB
5.45
5.45
Switching Time Test Circuit
VIN VDD=200V
Avalanche Resistance Test Circuit
10V 0V
L ID=6A VIN RL=33.3 D VOUT 10V 0V G 2SK4209 50 VDD 50 RG
PW=10s D.C.0.5%
P.G
RGS=50
S
2SK4209
No. A1516-2/5
2SK4209
20
ID -- VDS
Tc=25C
30
ID -- VGS
VDS=20V
18 16
10
V
8V
25
Tc= --25C
25C
Drain Current, ID -- A
14 12 10 8 6 4 2 0
6V
Drain Current, ID -- A
20
15
75C
10
5
VGS=4V
0 5 10 15 20 25 IT14789
0
0
3
6
9
12
15 IT14790
Drain-to-Source Voltage, VDS -- V
3.0
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
3.0
RDS(on) -- Tc
ID=5A
Static Drain-to-Source On-State Resistance, RDS(on) --
2.5
Static Drain-to-Source On-State Resistance, RDS(on) --
2.5
2.0
2.0
1.5
Tc=75C
1.5
1.0
25C
--25C
1.0
= V GS
=6 , ID 10V
.0A
0.5
0.5
0
4
5
6
7
8
9
10 IT14791
0 --50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
2
| yfs | -- ID
Case Temperature, Tc -- C
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IS -- VSD
IT14792
Forward Transfer Admittance, | yfs | -- S
VDS=20V
10
VGS=0V
5 3 2
Tc
C -25 =C 75
Source Current, IS -- A
7
C 25
1.0 7 5 3 0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
0.01 0.2
0.4
Tc= 75C
0.6
--25C
0.8
25C
1.0
1.2 IT14794
Drain Current, ID -- A
1000 7
IT14793 7 5 3 2
SW Time -- ID
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5 3 2
VDD=200V VGS=10V
td (off)
f=1MHz
Ciss, Coss, Crss -- pF
Ciss
1000 7 5 3 2 100 7 5 3
100 7 5 3 2 10 0.1
tf
Coss
tr
td(on)
Crss
2
3
5
7 1.0
2
3
5
7
10
2
3
2
0
10
20
30
40
50 IT14796
Drain Current, ID -- A
IT14795
Drain-to-Source Voltage, VDS -- V
No. A1516-3/5
2SK4209
10
VGS -- Qg
VDS=200V ID=10A Drain Current, ID -- A
5 3 2
ASO
IDP=24A ID=12A PW10s
9
Gate-to-Source Voltage, VGS -- V
8 7 6 5
4 3
s 1m
10
10 7 5 3 2 1.0 7 5 3 2
s 0
2
1 0
Operation in this area is limited by RDS(on). Tc=25C Single pulse
23 5 7 1.0 23 5 7 10 23 5 7100 2 3
ms s 10 n 0m atio er op
10
DC
0
10
20
30
40
50
60
70
80
0.1 0.1
Total Gate Charge, Qg -- nC
3.0
PD -- Ta
IT14797 200 190 180 160 140 120 100 80 60 40 20 0 0 20
Drain-to-Source Voltage, VDS -- V
PD -- Tc
57 1000 2 IT14798
Allowable Power Dissipation, PD -- W
2.5
2.0
1.5
1.0
0.5
0
Allowable Power Dissipation, PD -- W
0
20
40
60
80
100
120
140
160
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
120
EAS -- Ta
IT14799
Case Temperature, Tc -- C
IT14800
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175 IT10478
Ambient Temperature, Ta -- C
No. A1516-4/5
2SK4209
Note on usage : Since the 2SK4209 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of October, 2009. Specifications and information herein are subject to change without notice.
PS No. A1516-5/5

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